Flash Memory

Flash memories represent the synthesis of EPROM and EEPROM, since they are programmed and erased electrically but composed by single transistor cells .

Programming is carried out selectively by means of the hot electron mechanism; erasing is based on tunneling, and is carried out in blocks of different sizes, from 512 bytes to full chip. The first cell based on this consept was presented in 1979; the first commercial product, a 256-K memory chip, was presented by Toshiba in 1984 .

Sources:

Paulo Cappelletti, Carla Golla, Piero Olivo, Enrico Zanoni Flash Memories. Library of Congress Cataloging-in-Publication Data, 2013